Single-gate bandgap opening of bilayer graphene by dual molecular doping.

نویسندگان

  • Jaesung Park
  • Sae Byeok Jo
  • Young-Jun Yu
  • Youngsoo Kim
  • Jae Won Yang
  • Wi Hyoung Lee
  • Hyun Ho Kim
  • Byung Hee Hong
  • Philip Kim
  • Kilwon Cho
  • Kwang S Kim
چکیده

Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2 -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.

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عنوان ژورنال:
  • Advanced materials

دوره 24 3  شماره 

صفحات  -

تاریخ انتشار 2012